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EE-SY201
Dimensions
Photomicrosensor
(Reflective)
Features
Note:
All units are in millimeters unless otherwise indicated.
?
The LED requires a forward current of only 5 mA due to the
Photo-Darlington transistor built into the detector.
Four, 0.125
?
With a red LED light source.
Absolute Maximum Ratings
(Ta = 25 ° C)
Two. 0.5
Two, 1 dia.
Item
Symbol
Rated
value
Emitter
Forward current
I F
15 mA
(see note 1)
Pulse forward
current
I FP
---
Two. 0.7
Optical axis
Detector
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
V R
V CEO
V ECO
4V
24 V
---
Internal Circuit
Collector current I C
20 mA
Collector
P C
50 mW
A
C
Unless otherwise specified, the
dissipation
(see note 1)
K
E
tolerances are as shown below.
Dimensions Tolerance
3 mm max. ± 0.3
Ambient
temperature
Operating
Storage
Topr
Tstg
–20 ° C to
60 ° C
–20 ° C to
80 ° C
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
3 t mm v 6
6 t mm v 10
10 t mm v 18
18 t mm v 30
± 0.375
± 0.45
± 0.55
± 0.65
Note: 1. Refer to the temperature rating chart if the ambient
Soldering temperature Tsol 260 ° C
(see note 2)
temperature exceeds 25 ° C.
2. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
2.0 V typ., 2.6 V max.
0.01 μ A typ., 5 μ A max.
700 nm typ.
0.3 μ A min., 8.0 μ A max.
I F = 15 mA
V R = 4 V
I F = 10 mA
I F = 5 mA, V CE = 10 V
White paper with a reflection ratio
of 90%, d = 4 mm (see note)
Dark current
Leakage current
Collector–Emitter saturated
I D
I LEAK
V CE (sat)
2 nA typ., 250 nA max.
---
---
V CE = 10 V, 0 x
---
---
voltage
Peak spectral sensitivity
λ P
750 nm typ.
V CE = 10 V
wavelength
Rising time
Falling time
tr
tf
180 μ s typ.
60 μ s typ.
V CC = 5 V, R L = 100 ? , I L = 1 mA
V CC = 5 V, R L = 100 ? , I L = 1 mA
Note:
220
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
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